item saturated drain current transconductance pinch-off voltage gate source breakdown voltage noise figure associated gain symbol i dss 15 30 60 35 45 - -0.2 -0.7 -1.5 -3.0 - - - 0.75 0.85 9.5 10.5 - v ds = 2v, v gs = 0v v ds = 2v, i ds =10ma v ds = 2v, i ds =1ma v ds = 2v, i ds = 10ma, f = 12ghz i gs = -10 a ma ms v v db db g m v p v gso nf fhx04lg FHX05LG fhx06lg g as noise figure associated gain - 0.9 1.1 9.5 10.5 -db db nf g as noise figure associated gain - 1.1 1.35 9.5 10.5 -db db nf g as condition unit limit typ. max. min. electrical characteristics (ambient temperature ta=25 c) note: rf parameters are measured on a sample basis as follows: lot qty. sample qty. accept/reject 1200 or less 125 (0,1) 1201 to 3200 200 (0,1) 3201 to 10000 315 (1,2) 10001 or over 500 (1,2) available case styles: lg channel to case thermal resistance - 300 400 c/w r th 1 edition 1.1 july 1999 item symbol unit drain-source voltage v ds v 3.5 gate-source voltage v gs v -3.0 total power dissipation p t* mw 180 storage temperature t stg c -65 to +175 channel temperature t ch c 175 rating absolute maximum rating (ambient temperature ta=25 c) *note: mounted on al 2 o 3 board (30 x 30 x 0.65mm) fujitsu recommends the following conditions for the reliable operation of gaas fets: 1. the drain-source operating voltage (v ds ) should not exceed 2 volts. 2. the forward and reverse gate currents should not exceed 0.2 and -0.05 ma respectively with gate resistance of 4000 ? . 3. the operating channel temperature (t ch ) should not exceed 80 c. features ?low noise figure: 0.75db (typ.)@f=12ghz (fhx04) ?high associated gain: 10.5db (typ.)@f=12ghz ?lg 0.25 m, wg = 200 m ?gold gate metallization for high reliability ?cost effective ceramic microstrip (smt) package ?tape and reel packaging available fhx04lg, 05lg, 06lg super low noise hemt description the fhx04lg, FHX05LG, fhx06lg is a high electron mobility transistor(hemt) intended for general purpose, low noise and high gain amplifiers in the 2-18ghz frequency range.the devices are packaged in cost effective, low parasitic, hermetically sealed metal-ceramic package for high volume telecommunication, tvro, vsat or other low noise applications. fujitsu s stringent quality assurance program assures the highest reliability and consistent performance.
2 fhx04lg, 05lg, 06lg super low noise hemt gas lg drain current vs. drain-source voltage output power vs. input power f=12ghz v ds =2v gain matched i ds =15ma noise figure matched i ds =10ma -10 -5 0 5 12 34 input power (dbm) drain-source voltage (v) 40 30 20 0 10 10 15 5 0 drain current (ma) output power (dbm) nf & gas vs. temperature fhx04lg f=12ghz v ds =2v i ds =10ma 100 200 0 300 400 ambient temperature ( k) 1.5 1.0 0.5 15 10 5 noise figure (db) nf & gas vs. i ds fhx04lg 3 f=12ghz v ds =2v v ds =2v i ds =10ma 2 1 0 0 12 10 8 7 9 11 10 20 30 drain current (ma) noise figure (db) associated gain (db) power derating curve nf & gas vs. frequency fhx04lg 100 150 50 200 0 0 2 1 3 4 0 10 5 15 20 0 50 100 150 200 0 46 81012 20 ambient temperature ( c) frequency (ghz) total power dissipation (mw) noise figure (db) associated gain (db) v gs =0v -0.2v -0.6v nf gas nf gas nf -0.8v -0.4v
3 typical noise figure circle f=12ghz v ds =2v i ds =10ma opt=0.72 152 rn/50=0.04 nfmin=0.75db fhx04lg freq. (ghz) (mag) (ang) nfmin (db) rn/50 opt 2.0 4.0 6.0 8.0 10.0 12.0 14.0 16.0 18.0 0.99 0.97 0.93 0.87 0.80 0.72 0.63 0.53 0.42 29.0 53.0 77.0 101.0 127.0 152.0 178.0 -156.0 -129.0 0.33 0.35 0.45 0.55 0.66 0.75 0.88 1.05 1.30 0.43 0.30 0.20 0.12 0.07 0.04 0.03 0.05 0.09 noise parameters fhx04lg v ds =2v, i ds =10ma ga(max) and |s 21 | vs. frequency fhx04lg 12 8 4 0 2 4 6 810 20 frequency (ghz) gain (db) v ds =2v i ds =10ma |s 21 | ga(max) +j250 +j100 +j50 +j25 +j10 0 -j10 -j25 -j50 -j100 -j250 opt 25 10 100 1.0db 2.5 3.0 2.0 1.5 50 fhx04lg, 05lg, 06lg super low noise hemt
+j250 +j100 +j50 +j25 +j10 0 -j10 -j25 -j50 -j100 -j250 s 11 s 22 180 +90 0 -90 s 21 s 12 scale for |s 21 | scale for |s 12 | 0.04 0.08 0.12 0.16 21 3 4 1 ghz 1 ghz 1 ghz 1 ghz 18 ghz 16 14 12 12 14 16 10 10 8 8 6 6 4 4 2 16 16 14 12 12 10 10 8 8 6 6 4 4 2 2 2 18 ghz 18 ghz 18 ghz 100 250 25 50 ? s-parameters fhx04lg v ds = 2v, i ds = 10ma frequency s11 s21 s12 s22 (ghz) mag ang mag ang mag ang mag ang 1.0 0.990 -19.3 4.232 162.1 0.016 75.1 0.576 -14.3 2.0 0.965 -37.5 4.115 144.1 0.030 64.8 0.563 -28.1 3.0 0.928 -55.2 3.923 127.4 0.042 53.3 0.546 -41.2 4.0 0.886 -72.1 3.737 110.9 0.052 41.9 0.525 -54.4 5.0 0.844 -88.3 3.518 95.6 0.059 32.2 0.505 -67.6 6.0 0.804 -103.4 3.302 80.8 0.063 23.9 0.489 -80.7 7.0 0.771 -117.4 3.090 66.4 0.066 16.6 0.484 -93.0 8.0 0.741 -129.6 2.876 53.1 0.065 11.5 0.487 -104.5 9.0 0.717 -140.3 2.703 40.7 0.066 4.9 0.497 -115.1 10.0 0.695 -150.8 2.592 28.6 0.065 -0.3 0.503 -124.9 11.0 0.675 -161.2 2.476 16.4 0.064 -3.0 0.517 -135.7 12.0 0.650 -171.5 2.374 4.2 0.064 -6.4 0.534 -145.8 13.0 0.630 178.9 2.277 -7.8 0.063 -9.3 0.552 -156.1 14.0 0.607 170.2 2.176 -19.1 0.064 -12.5 0.585 -164.6 15.0 0.585 161.8 2.144 -30.7 0.065 -16.4 0.617 -171.7 16.0 0.557 151.8 2.151 -43.2 0.066 -22.2 0.642 177.8 17.0 0.522 140.9 2.142 -56.9 0.067 -29.4 0.673 169.5 18.0 0.480 128.4 2.136 -71.2 0.068 -39.2 0.694 159.7 fhx04lg, 05lg, 06lg super low noise hemt
5 for further information please contact: fujitsu compound semiconductor, inc. 2355 zanker rd. san jose, ca 95131-1138, u.s.a. phone: (408) 232-9500 fax: (408) 428-9111 www.fcsi.fujitsu.com fujitsu microelectronics europe, gmbh quantum devices division network house norreys drive maidenhead, berkshire sl6 4fj phone:+44 (0)1628 504800 fax:+44 (0)1628 504888 fujitsu limited reserves the right to change products and specifications without notice. the information does not convey any license under rights of fujitsu limited or others. ? 1998 fujitsu compound semiconductor, inc. printed in u.s.a. fcsi0598m200 fujitsu compound semiconductor products contain gallium arsenide (gaas) which can be hazardous to the human body and the environment. for safety, observe the following procedures: caution ?do not put these products into the mouth. ?do not alter the form of this product into a gas, powder, or liquid through burning, crushing, or chemical processing as these by-products are dangerous to the human body if inhaled, ingested, or swallowed. ?observe government laws and company regulations when discarding this product. this product must be discarded in accordance with methods specified by applicable hazardous waste procedures. 0.5 (0.02) 1.0 (0.039) 1.3 max (0.051) 0.1 (0.004) 1.5 0.3 (0.059) 1.78 0.15 (0.07) 1.5 0.3 (0.059) 4.78 0.5 case style "lg" metal-ceramic hermetic package unit: mm(inches) 1. gate 2. source 3. drain 4. source 1.5 0.3 (0.059) 1.78 0.15 (0.07) 1.5 0.3 (0.059) 4.78 0.5 1 2 3 4 fhx04lg, 05lg, 06lg super low noise hemt
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